A four-stage Ku-band 1 watt PHEMT MMIC power amplifier

Author

Liu, H.Z. ; Wang, C.C. ; Wang, Y.H. ; Huang, J.W. ; Chang, C.H. ; Wu, W. ; Wu, C.L. ; Chang, C.S.

Author_Institution

Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

33

Lastpage

36

Abstract

In this paper, a Ku-band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU (outdoor unit) applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; impedance matching; indium compounds; integrated circuit design; integrated circuit measurement; satellite ground stations; semiconductor device models; telecommunication equipment; 1 W; 14 to 17 GHz; 24.5 percent; 27.5 percent; 30 dB; 50 ohm; 7 V; 700 mA; AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier; DC bias condition; VSAT ODU applications; VSAT outdoor unit; amplifier design; four-stage Ku-band PHEMT MMIC power amplifier; gain compression power; input/output impedance matching; power-added efficiency; saturation power; small-signal gain; Circuit simulation; FETs; Gain; Gallium arsenide; Impedance; MMICs; PHEMTs; Power amplifiers; Power generation; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049023

Filename

1049023