Monolithic integration of In/sub 0.53/Ga/sub 0.47/As photodiodes and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on GaAs substrates for long wavelength OEIC applications

Author

Jang, J.H. ; Cueva, G. ; Sankaralingam, R. ; Fay, P. ; Hoke, W.E. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

55

Lastpage

58

Abstract

Metamorphic long wavelength double heterojunction photodiodes with In/sub 0.53/Ga/sub 0.47/As photo-absorption layer and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As metamorphic HEMTs were realized on the same GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics and the performance of HEMTs beneath the photodiode layers were also comparable to those fabricated on HEMT-only heterostructures.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; photodiodes; semiconductor device manufacture; semiconductor device measurement; 1.55 micron; GaAs substrates; InGaAs photo-absorption layers; InGaAs photodiodes; InGaAs-GaAs; InGaAs-InAlAs-GaAs; InGaAs/InAlAs metamorphic HEMT; integrated optoelectronics; long wavelength OEIC applications; long wavelength optical fiber communications; metamorphic long wavelength double heterojunction photodiodes; optoelectronic IC; photodiode speed/leakage characteristics; Gallium arsenide; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Monolithic integrated circuits; Optoelectronic devices; Photodetectors; Photodiodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049028

Filename

1049028