Title :
Monolithic integration of In/sub 0.53/Ga/sub 0.47/As photodiodes and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on GaAs substrates for long wavelength OEIC applications
Author :
Jang, J.H. ; Cueva, G. ; Sankaralingam, R. ; Fay, P. ; Hoke, W.E. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Metamorphic long wavelength double heterojunction photodiodes with In/sub 0.53/Ga/sub 0.47/As photo-absorption layer and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As metamorphic HEMTs were realized on the same GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics and the performance of HEMTs beneath the photodiode layers were also comparable to those fabricated on HEMT-only heterostructures.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; photodiodes; semiconductor device manufacture; semiconductor device measurement; 1.55 micron; GaAs substrates; InGaAs photo-absorption layers; InGaAs photodiodes; InGaAs-GaAs; InGaAs-InAlAs-GaAs; InGaAs/InAlAs metamorphic HEMT; integrated optoelectronics; long wavelength OEIC applications; long wavelength optical fiber communications; metamorphic long wavelength double heterojunction photodiodes; optoelectronic IC; photodiode speed/leakage characteristics; Gallium arsenide; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Monolithic integrated circuits; Optoelectronic devices; Photodetectors; Photodiodes; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049028
