Title :
40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors
Author :
Wu, C.Q. ; Sovero, E.A. ; Massey, B.
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Abstract :
High gain and bandwidth transimpedance amplifiers (TIA) are required for fiber optic receiver modules. This paper reports on the design, fabrication and characterization of a 40 Gbit/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP/InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a stand-alone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer (DMUX) in short reach applications.
Keywords :
III-V semiconductors; SONET; bipolar analogue integrated circuits; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical fibre networks; optical receivers; synchronous digital hierarchy; 1800 ohm; 40 Gbit/s; InP-InGaAs; InP/InGaAs; SONET/SDH STS-768/STM-256 applications; Vitesse Semiconductor Corporation; differential outputs; fiber optic receiver modules; heterojunction bipolar transistors; short reach applications; transimpedance amplifier; Bandwidth; Differential amplifiers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical fiber amplifiers; Optical fibers; Optical receivers; Semiconductor optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049030
