Title :
Capacitance topology for high frequency modeling of bipolar transistors
Author :
Ciubotaru, A.A. ; Carter, R.L.
Abstract :
The standard SPICE Gummel-Poon model for bipolar transistors in the case of current crowding is inaccurate at high frequencies primarily due to the position of the capacitances. An improved distributed bipolar transistor model is developed, with fractions of both the depletion and the diffusion capacitances placed outside the base spreading resistance and the transistor junctions. The model is contrasted with the standard model by comparing the high frequency characteristics for an HBT.
Keywords :
S-parameters; UHF bipolar transistors; capacitance; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; bipolar transistors; capacitance topology; current crowding; depletion capacitance; diffusion capacitance; distributed bipolar transistor model; high frequency characteristics; high frequency modeling; Bipolar transistors; Capacitance; Circuits; Contact resistance; Frequency; Heterojunction bipolar transistors; Phase modulation; Proximity effect; SPICE; Topology;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596609
