Title :
SiGe differential transimpedance amplifier with 50 GHz bandwidth
Author :
Weiner, J.S. ; Leven, A. ; Houtsma, V. ; Baeyens, Y. ; Chen, Y.K. ; Paschke, P.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper, we demonstrate a fully differential transimpedance amplifier (TIA) with 49 dB-ohm transimpedance, greater than 50 GHz bandwidth, and input-referred current noise less than 30pA//spl radic/(Hz).
Keywords :
Ge-Si alloys; differential amplifiers; integrated circuit noise; integrated optoelectronics; optical fibre communication; optical fibre networks; optical receivers; 50 GHz; OEIC; SiGe; differential transimpedance amplifier; input-referred current noise; optical fiber communication systems; receiver; Bandwidth; Circuits; Differential amplifiers; Frequency; Gain measurement; Germanium silicon alloys; Noise measurement; Optical amplifiers; Optical noise; Silicon germanium;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049031
