Title :
Investigation of the offset charge noise in single electron tunneling devices
Author :
Ahlers, Franz-Josef ; Krupenin, V.A. ; Lotkhov, S.V. ; Niemeyer, J. ; Presnov, D.E. ; Scherer, Hansjorg ; Weimann, Thomas ; Wol, H.
Author_Institution :
Physikalisch Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
The offset charge noise in metallic single electron tunneling (SET) devices fabricated on dielectric substrates was experimentally studied. On the basis of stereoscopic measurements of the low-frequency charge noise we show that the substrate makes an essential contribution to the total noise. We have observed that the intensity of the charge noise in SET transistors depends on the biasing dc current but is insensitive to temperature variations up to 300 mK.
Keywords :
semiconductor device noise; single electron transistors; tunnel transistors; SET transistors; Si; biasing dc current; dielectric substrates; offset charge noise; single electron tunneling devices; stereoscopic measurements; temperature variations; Acoustical engineering; Circuit noise; Current measurement; Dielectric substrates; Electrons; Fluctuations; Low-frequency noise; Noise measurement; Temperature dependence; Tunneling;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547320
