Title :
A 3-V fully differential distributed limiting driver for 40 Gb/s optical transmission systems
Author :
McPherson, D.S. ; Pera, F. ; Tazlauanu, A. ; Voinigescu, S.P.
Author_Institution :
Quake Technol. Inc., Ottawa, Ont., Canada
Abstract :
A fully differential 40 Gb/s electroabsorption modulator driver is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.0 V peak-to-peak per side in a 50 /spl Omega/ load at data rates as high as 44 Gb/s. Both the input and output are internally matched to 50 /spl Omega/ and exhibit return loss of better than 10 dB up to 50 GHz. Additional features of the driver include the use of a single -5.2 V supply, output swing control (1.7 to 3.0 V/sub pp/ per side), DC output offset control (-0.15 V to -1.1 V) and pulse width control (30% to 70%).
Keywords :
HEMT integrated circuits; III-V semiconductors; digital communication; distributed amplifiers; driver circuits; electro-optical modulation; electroabsorption; gallium arsenide; high-speed integrated circuits; optical communication equipment; wideband amplifiers; -5.2 V; 10 dB; 3 V; 40 to 44 Gbit/s; 50 GHz; GaAs; GaAs PHEMT technology; QT3055 driver; differential electroabsorption modulator driver; distributed limiting architecture; fully differential distributed limiting driver; high speed optical transmission systems; optical communication systems; Communication system control; Distributed amplifiers; Driver circuits; Electric breakdown; Gallium arsenide; Geometry; Optical pulses; PHEMTs; Solid modeling; Space vector pulse width modulation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049037
