An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems

Author

Masuda, S. ; Hirose, T. ; Takahashi, T. ; Nishi, M. ; Yokokawa, S. ; Iijima, S. ; Ono, K. ; Hara, N. ; Joshin, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

99

Lastpage

102

Abstract

We successfully developed state of the art InP HEMT distributed amplifiers by using inverted microstrip line technology. For one, we achieved a gain of 14.5 dB and a 94-GHz 3-dB bandwidth resulting in a gain-bandwidth product of 500 GHz, and for the other we achieved a gain of 7.5 dB and a 3-dB bandwidth of over 110 GHz. This technology also demonstrates the capability of fabricating ultra-broadband packaged ICs with flip-chip assembly for operation up to the W-band. To our knowledge, these results represent the highest gain bandwidth product and the widest bandwidth for distributed amplifiers reported to date.

Keywords

HEMT integrated circuits; III-V semiconductors; distributed amplifiers; field effect MIMIC; flip-chip devices; indium compounds; integrated circuit packaging; microstrip lines; optical communication equipment; wideband amplifiers; 110 GHz; 14.5 dB; 7.5 dB; 94 GHz; InAlAs-InGaAs-InP; InP; InP HEMT distributed amplifier; W-band; distributed baseband amplifier; flip-chip assembly; inverted microstrip line technology; optical transmission systems; ultra-broadband packaged ICs; Bandwidth; Baseband; Distributed amplifiers; Gain; HEMTs; Indium phosphide; Microstrip; Optical amplifiers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049038

Filename

1049038