Title :
Electrothermal simulation of HBT by TLM method with quasi two dimensional model
Author :
Jinjin Shen ; Kangsheng Chen ; Zhikun Xie
Author_Institution :
Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Presents an improved quasi two dimensional model incorporating depletion-layer approximation to simulate electrothermal properties of HBT. In the model the temperature profile and minority carrier distributions are numerically simulated by transmission line matrix (TLM) method. The results show that this model can conveniently simulate the electrothermal effects under the efficient reduction both in CPU time and memory space.
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; minority carriers; semiconductor device models; transmission line matrix methods; HBT; TLM method; depletion-layer approximation; electrothermal simulation; microwave bipolar transistors; minority carrier distributions; quasi two dimensional model; temperature profile; Charge carrier processes; Data mining; Electrothermal effects; Heat transfer; Heterojunction bipolar transistors; Poisson equations; Temperature distribution; Thermal conductivity; Thyristors; Transmission line matrix methods;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596610
