DocumentCode
2477451
Title
RF power amplifiers for wireless communications
Author
Weitzel, C.E.
Author_Institution
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
fYear
2002
fDate
20-23 Oct. 2002
Firstpage
127
Lastpage
130
Abstract
A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared.
Keywords
III-V semiconductors; UHF power amplifiers; cellular radio; code division multiple access; elemental semiconductors; gallium arsenide; silicon; 1800 MHz; 1900 MHz; 800 MHz; 900 MHz; CDMA; DCS; GSM; GaAs; GaAs/Si cellphone RF power amplifiers; RF amplifier performance evaluation; Si; Si/GaAs based technologies; WCDMA; amplifier die size; wireless power amplifiers; GSM; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Multiaccess communication; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location
Monterey, California, USA
ISSN
1064-7775
Print_ISBN
0-7803-7447-9
Type
conf
DOI
10.1109/GAAS.2002.1049044
Filename
1049044
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