DocumentCode :
2477451
Title :
RF power amplifiers for wireless communications
Author :
Weitzel, C.E.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
fYear :
2002
fDate :
20-23 Oct. 2002
Firstpage :
127
Lastpage :
130
Abstract :
A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared.
Keywords :
III-V semiconductors; UHF power amplifiers; cellular radio; code division multiple access; elemental semiconductors; gallium arsenide; silicon; 1800 MHz; 1900 MHz; 800 MHz; 900 MHz; CDMA; DCS; GSM; GaAs; GaAs/Si cellphone RF power amplifiers; RF amplifier performance evaluation; Si; Si/GaAs based technologies; WCDMA; amplifier die size; wireless power amplifiers; GSM; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Multiaccess communication; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-7447-9
Type :
conf
DOI :
10.1109/GAAS.2002.1049044
Filename :
1049044
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2477451
بازگشت