Gallium nitride: use in high power control applications

Author

Caverly, R.H. ; Drozdovski, N.V. ; Joye, C. ; Quinn, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

131

Lastpage

134

Abstract

The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.

Keywords

III-V semiconductors; aluminium compounds; capacitance; electric resistance; equivalent circuits; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN FET; FET control model; equivalent circuit models; gate bias circuit effects; high breakdown voltage devices; high power microwave/RF control applications; high power operation; off-state capacitance; on-state resistance; switch cutoff frequency; Capacitance; Circuits; Cutoff frequency; Gallium nitride; III-V semiconductor materials; Microwave FETs; Power control; Predictive models; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049045

Filename

1049045