DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer

Author

Yang, B. ; Ye, P.D. ; Kwo, J. ; Frei, M.R. ; Gossmann, H.-J.L. ; Mannaerts, J.P. ; Sergent, M. ; Hong, M. ; Ng, K.K. ; Bude, J.

Author_Institution

Agere Syst., Murray Hill, NJ, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

139

Lastpage

142

Abstract

DC characteristics of a depletion-mode (D-mode) GaAs MOSFET with a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer (74 /spl Aring/) show low gate leakage current, negligible drain current hysteresis and higher than 10 V gale-drain two-terminal breakdown voltage. Compared to MESFET with the same gate length, channel material and fabricated by the same process, the GaAs MOSFET shows higher unity current gain cutoff frequency (Ft). The higher Ft for the MOSFET than that of the MESFET agrees with earlier theoretical predictions.

Keywords

III-V semiconductors; MOSFET; UHF field effect transistors; dielectric thin films; gadolinium compounds; gallium arsenide; gallium compounds; leakage currents; microwave field effect transistors; semiconductor device breakdown; semiconductor-insulator boundaries; 10 V; 12.4 GHz; 37 GHz; 74 A; DC characteristics; Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)-GaAs; RF characteristics; depletion-mode GaAs MOSFET; drain current hysteresis; gale-drain two-terminal breakdown voltage; gate leakage current; thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer; unity current gain cutoff frequency; Dielectrics; Etching; Gallium arsenide; Gold; Leakage current; MESFETs; MOSFET circuits; Radio frequency; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049047

Filename

1049047