DocumentCode
2477530
Title
A physics-based electro-thermal model for microwave and millimetre wave HEMTs
Author
Johnson, R.G. ; Snowden, C.M. ; Pollard, R.D.
Author_Institution
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Volume
3
fYear
1997
fDate
8-13 June 1997
Firstpage
1485
Abstract
An electro-thermal physical model is described for HEMT microwave and millimetre wave simulations which includes temperature effects due to self-heating within the device. Comparisons of the results from the model with measured data are made and it is found that good agreement is obtained without fitting of any of the parameters. The model is compatible with CAD requirements and is particularly suited to large-signal applications.
Keywords
circuit CAD; high electron mobility transistors; microwave circuits; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; CAD requirements; large-signal applications; microwave HEMTs; millimetre wave HEMTs; physics-based electro-thermal model; self-heating; temperature effects; Application software; HEMTs; Intrusion detection; MESFETs; MODFETs; Microwave devices; Power generation; Predictive models; Temperature dependence; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.596611
Filename
596611
Link To Document