Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth

Author

Kawase, T. ; Hosaka, N. ; Hashio, K. ; Matsushima, M. ; Sakurada, T. ; Nakai, R.

Author_Institution

Sumitomo Electr. Industries Ltd., Hyogo, Japan

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

147

Lastpage

150

Abstract

Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI´s Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.

Keywords

III-V semiconductors; crystal growth from melt; electrical resistivity; indium compounds; integrated circuit technology; photoluminescence; substrates; 4 inch; IC application; InP; InP substrate; etch-pit density distribution; macroscopic uniformity; micro-resistivity profiles; microscopic uniformity; photoluminescence; vertical boat growth; Application specific integrated circuits; Atmosphere; Boats; Crystals; Etching; Fluctuations; Indium phosphide; Microscopy; Photoluminescence; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049048

Filename

1049048