Title :
1.1 W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26 V operation
Author :
Nakata, K. ; Masuyama, R. ; Nakajima, S.
Author_Institution :
Optoelectronics R&D Labs., Sumitomo Electr. Industries Ltd., Yokohama, Japan
Abstract :
A GaAs/InGaP composite channel is proposed in order to improve the electron transport properties of an InGaP FET. Adopting an LDD (Lightly Doped Drain) structure and optimizing gate to drain spacing improved the breakdown characteristic and enabled high voltage operation of the FET. With this novel FET, we could achieve a high output power density of 1.1 W/mm at high voltage operation such as 26 V. The FET showed better distortion characteristics than the conventional GaAs MESFET. Third order inter modulation distortion (IM3) was improved by 7 dB.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; intermodulation distortion; power field effect transistors; semiconductor device breakdown; 16.3 dB; 26 V; 59.7 percent; GaAs-InGaP; GaAs/InGaP composite channel FET; HV operation; IM3 improvement; asymmetrical LDD structure; breakdown characteristic; distortion characteristics; electron transport properties; high output power density; high power FET; high voltage operation; lightly doped drain structure; third order IMD improvement; third order intermodulation distortion; Breakdown voltage; Buffer layers; Doping; Electrons; FETs; Gallium arsenide; MESFETs; Power generation; Research and development; Wideband;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049049
