• DocumentCode
    2477581
  • Title

    An InP HBT common-base amplifier with tunable transimpedance for 40 Gb/s applications

  • Author

    Kobayashi, K.W.

  • Author_Institution
    SIRENZA MICRODEVICES, Torrance, CA, USA
  • fYear
    2002
  • fDate
    20-23 Oct. 2002
  • Firstpage
    155
  • Lastpage
    158
  • Abstract
    This work features a 40 Gb/s common-base transimpedance amplifier (TIA) design that employs electronically tunable transimpedance to compensate for various combinations of photodetector and hybrid interconnect parasitics. A tuning transimpedance BW range of 10 GHz is demonstrated using this approach. Integrated with a 40 fF photodetector, the transimpedance amplifier achieves 62.3 dB-ohm (1.3 kohm) differential transimpedance with a bandwidth of 39.3 GHz while consuming only 165 mW. This corresponds to a transimpedance-BW product per DC power of 310 ohms-GHz/mW. To the author´s knowledge, this work is the first published demonstration of a tunable transimpedance amplifier for 40 Gb/s applications, and is among the highest TZ-BWP per DC power reported for a 40 Gb/s TIA.
  • Keywords
    III-V semiconductors; bipolar analogue integrated circuits; circuit tuning; compensation; digital communication; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; photodetectors; wideband amplifiers; 165 mW; 39.3 GHz; 40 Gbit/s; 40 fF; Gbit/s applications; InP; InP HBT common-base amplifier; OEIC; amplifier design; common-base transimpedance amplifier; electronically tunable transimpedance; hybrid interconnect parasitics; photodetector parasitics; Bandwidth; Broadband amplifiers; Character generation; Detectors; Differential amplifiers; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
  • Conference_Location
    Monterey, California, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-7447-9
  • Type

    conf

  • DOI
    10.1109/GAAS.2002.1049050
  • Filename
    1049050