Title :
Spatial light modulators based on semi-insulating multiple quantum wells
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In this talk, I will review our work on optically as well as electrically addressed semi-insulating multiple quantum well (SI-MQW) spatial light modulators. Optically addressed GaAs/AlGaAs SI-MQW devices have shown 1 μJ/cm2 switching energies, 4.5:1 contrast ratios, 10% intensity throughput and switching times as fast as 30 ps. The non-pixelated nature of SI-MQW devices lends itself easily to many image or information processing applications which require interference of two information bearing beams such as in correlation and convolution operations. We will report on use of these devices for spatial (image) as well as temporal and frequency correlators
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; image processing; optical correlation; optical switches; semiconductor quantum wells; semiconductor switches; spatial filters; spatial light modulators; 30 ps; GaAs-AlGaAs; GaAs/AlGaAs SI-MQW devices; contrast ratios; convolution operations; correlation operations; electrically addressed; frequency correlators; image processing applications; information bearing beam interference; information processing applications; intensity throughput; non-pixelated nature; optically addressed; review; semi-insulating multiple quantum wells; spatial image correlators; spatial light modulators; switching energies; switching times; temporal correlators; Convolution; Frequency; High speed optical techniques; Information processing; Optical computing; Optical devices; Optical filters; Optical modulation; Optical refraction; Optical variables control;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379037
