40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications

Author

Mouzannar, W. ; Jorge, F. ; Vuye, S. ; Dutisseuil, E. ; Lefevre, R.

Author_Institution

Alcatel Res. & Innovation/OPTO+, Marcoussis, France

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

163

Lastpage

166

Abstract

In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.

Keywords

HEMT integrated circuits; III-V semiconductors; driver circuits; gallium arsenide; integrated circuit design; integrated circuit measurement; modulators; optical fibre communication; optical modulation; preamplifiers; 0.15 micron; 26 dB; 40 Gbit/s; 50 GHz; 50 ohm; 7.5 V; GaAs; GaAs pHEMT high voltage modulator drivers; LiNbO/sub 3/; LiNbO/sub 3/ modulators; cascode cells; double-distributed amplifier topology; driver amplifiers; driver small signal gain; high gain/HV modulator driver IC; load impedance; long haul optical fiber communications; modulator bandwidth/output voltage swing; preamplifiers; Bandwidth; Distributed amplifiers; Driver circuits; Frequency; Gallium arsenide; Optical amplifiers; Optical fiber communication; PHEMTs; Preamplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049052

Filename

1049052