Title :
1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology
Author :
Sato, M. ; Shigematsu, H. ; Inoue, Y. ; Arai, T. ; Sawada, K. ; Takahashi, T. ; Makiyarna, K. ; Hirose, T.
Author_Institution :
High-speed IC Technol. Dept., Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We have developed an InP-HEMT differential-ended broadband preamplifier with THz-class gain-bandwidth product by using an improved Cherry-Hooper topology. The key to achieving the high performance preamplifier is to use a mismatching technique, which expands the impedance difference between gain stages. Using this technique, we achieved 64 dB/spl Omega/ transimpedance gain with a 40 GHz bandwidth, and its gain-bandwidth product reached 1.42 THz - the highest yet reported for 40 Gbit/s preamplifiers.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; differential amplifiers; impedance matching; indium compounds; integrated circuit design; integrated circuit measurement; millimetre wave amplifiers; optical fibre communication; preamplifiers; wideband amplifiers; 40 GHz; 40 Gbit/s; Cherry-Hooper topology; InP; InP-HEMT preamplifiers; THz-class gain-bandwidth product; differential-ended broadband preamplifiers; gain stage differences; gain stage impedance mismatching techniques; high-speed fiber optic communications; transimpedance gain; wide bandwidth preamplifiers; Bandwidth; Circuit topology; Differential amplifiers; High speed optical techniques; Impedance; Optical amplifiers; Optical distortion; Optical receivers; Preamplifiers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049053
