An 8-Watt 3.5 GHz power amplifier with tunable matching

Author

Rockwell, S. ; Emrick, R. ; Bosco, B. ; Franson, S. ; Miller, M. ; Johnson, E. ; Crowder, J.

Author_Institution

Motorola Labs., Chandler, AZ, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

185

Lastpage

188

Abstract

A high power 3-stage, S-band power amplifier MMIC implemented with a partially matched output stage is presented. This MMIC PA achieves 39 dBm output power and greater than 25% power added efficiency using 0.6 /spl mu/m PHEMT technology. Small-signal performance matches very well with modeled predictions. The amplifier is exceptionally stable under varying loads, has a bandwidth of several 100 MHz and is easily matched and tuned about the 3.5 GHz band with a simple output matching technique using chip caps, bond wires and duroid transmission lines.

Keywords

HEMT integrated circuits; MMIC power amplifiers; circuit CAD; circuit simulation; circuit stability; circuit tuning; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit packaging; thermal management (packaging); 0.6 micron; 25 percent; 3.5 GHz; 8 W; IC packaging; InGaAs-AlGaAs; MMIC power amplifier; PA output power/power added efficiency; PA tunable matching; PAE; PHEMT technology; S-band power amplifier; amplifier load stability/bandwidth; bond wires; chip caps; circuit matching; circuit tuning; duroid transmission lines; partially matched output stages; small-signal performance; thermal characterization; Bandwidth; Bonding; High power amplifiers; Impedance matching; MMICs; PHEMTs; Power amplifiers; Power generation; Predictive models; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049056

Filename

1049056