Title :
A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE
Author :
Bessemoulin, Alex ; Quay, M.R. ; Ramberger, S. ; Schlechtweg, Michael
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
Abstract :
The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/ = 36.3 dBm (4.3 Watts) and P/sub sat/ of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; 0.3 micron; 10 GHz; 18 dB; 25 percent; 35 percent; 4 W; GaAs; PAE; X-band; chip size reduction; high power amplifier MMIC; linear gain; peak output powers; power PHEMT process; power added efficiency; Coplanar waveguides; Gain; Gallium arsenide; High power amplifiers; MMICs; Microwave amplifiers; Monolithic integrated circuits; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049057
