Title :
A 23/3-dB dual-gain low-noise amplifier for 5-GHz-band wireless applications
Author :
Aoki, Y. ; Hayama, N. ; Fujii, M. ; Hida, H.
Author_Institution :
Photonic & Wireless Devices Res. Labs, NEC Corp., Ibaraki, Japan
Abstract :
We have developed a wide-dynamic-range low-noise amplifier (LNA) based on InGaP/GaAs hetero bipolar transistors (HBTs) for 5-GHz-band wireless applications. With no external matching components, this dual-gain LNA (with a 20-dB gain attenuation function) has a very high performance; namely, a noise figure (NF) of 2.3 dB, a gain of 23 dB, an output 1-dB compression point(P/sub 1dB/) of 9.8 dBm, and a DC power consumption (P/sub dc/) of 28 mW at 3.0 V. Its figure of merit, defined as (gain/NF)/spl middot/(P/sub 1dB//Pd/sub dc/), is 3.3, which is the highest value in the C-band to date.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit noise; radio receivers; 2.3 dB; 23 dB; 28 mW; 3 V; 3 dB; 5 GHz; C-band; DC power consumption; InGaP-GaAs; InGaP/GaAs HBT based LNA; dual-gain LNA; dual-gain low-noise amplifier; figure of merit; gain attenuation function; noise figure; output compression point; wide-dynamic-range low-noise amplifier; wireless receiver applications; Energy consumption; FETs; Gallium arsenide; Germanium silicon alloys; Inductors; Low-noise amplifiers; Noise measurement; Performance gain; Silicon germanium; Spirals;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049059
