• DocumentCode
    2477761
  • Title

    Medium wavelength infrared detector with diffused AlxIn/sub 1-x/Sb/InSb quantum-well structure

  • Author

    Sim, Steven K H ; Mutamba, Kabula ; Sigurdardóttir, Anna ; Hartnagel, Hans L.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • fYear
    1998
  • fDate
    29-29 Aug. 1998
  • Firstpage
    18
  • Lastpage
    21
  • Abstract
    The subband of Al xIn 1-xSb/InSb quantum-well structure under the effect of interdiffusion were calculated. The model use the 14-band calculation and the effective Hamiltonian approach. The results show that the interband transition energy is relatively small, compared to quantum well constructed by As based. With a particular Al concentration and design, the interband transition energy at around 200-300 meV. This is the range for medium wavelength infrared region. Hence, we suggest in this paper to use Al xIn 1-xSb/InSb quantum-well structure for infrared detectors. The effect of interdiffusion shows a shift in interband transitions energy, which is useful for find tunneling the transition energy. When it apply to infrared detector, the absorption wavelength can be tune by interdiffusion to a desire value. In this paper, we propose to use antimonide based interdiffusion quantum well as an infrared detector, and show it wavelength tunability.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical interdiffusion; indium compounds; infrared detectors; quantum well devices; AlInSb-InSb; diffused quantum well; effective Hamiltonian; interband transition energy; interdiffusion; medium wavelength infrared detector; subband structure; wavelength tunability; Atmospheric waves; Charge carrier processes; Doping; Electromagnetic wave absorption; Infrared detectors; Photonic band gap; Quantum wells; Roads; Superlattices; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-4932-6
  • Type

    conf

  • DOI
    10.1109/HKEDM.1998.740179
  • Filename
    740179