DocumentCode
2477761
Title
Medium wavelength infrared detector with diffused AlxIn/sub 1-x/Sb/InSb quantum-well structure
Author
Sim, Steven K H ; Mutamba, Kabula ; Sigurdardóttir, Anna ; Hartnagel, Hans L.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
18
Lastpage
21
Abstract
The subband of Al xIn 1-xSb/InSb quantum-well structure under the effect of interdiffusion were calculated. The model use the 14-band calculation and the effective Hamiltonian approach. The results show that the interband transition energy is relatively small, compared to quantum well constructed by As based. With a particular Al concentration and design, the interband transition energy at around 200-300 meV. This is the range for medium wavelength infrared region. Hence, we suggest in this paper to use Al xIn 1-xSb/InSb quantum-well structure for infrared detectors. The effect of interdiffusion shows a shift in interband transitions energy, which is useful for find tunneling the transition energy. When it apply to infrared detector, the absorption wavelength can be tune by interdiffusion to a desire value. In this paper, we propose to use antimonide based interdiffusion quantum well as an infrared detector, and show it wavelength tunability.
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; indium compounds; infrared detectors; quantum well devices; AlInSb-InSb; diffused quantum well; effective Hamiltonian; interband transition energy; interdiffusion; medium wavelength infrared detector; subband structure; wavelength tunability; Atmospheric waves; Charge carrier processes; Doping; Electromagnetic wave absorption; Infrared detectors; Photonic band gap; Quantum wells; Roads; Superlattices; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740179
Filename
740179
Link To Document