Title :
STS-768 multiplexer with full rate output data retimer in InP HBT
Author :
Hendarman, A. ; Sovero, E.A. ; Xu, X. ; Witt, K.
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Abstract :
A 16:1 STS-768 multiplexer IC has been designed and fabricated using the Vitesse Semiconductor VIP-1 process. This IC is part of a complete chip-set solution for a 40 Gbps STS-768 optical communication transceiver module. The multiplexer IC features a full-rate clock multiplication unit and a data retimer in the output stage to reduce duty cycle distortion and jitter in the output data eye. Because of its strict timing requirements this approach needs fast logic gates with a very low gate delay. The Vitesse VIP-I process, with 150 GHz f and 150 GHz f/sub max/ HBT, is an obvious choice to implement this IC. Layout design and package design also play significant roles in the IC performance. This paper discusses circuit design, package design and measurement results for the multiplexer IC.
Keywords :
III-V semiconductors; bipolar integrated circuits; indium compounds; integrated circuit design; integrated circuit measurement; jitter; multiplexing equipment; optical communication equipment; optical receivers; optical transmitters; timing; transceivers; 150 GHz; 40 Gbit/s; HBT IC implementation; IC measurement; IC performance; InP; InP HBT; STS-768 multiplexer IC; STS-768 optical communication transceiver module; Vitesse VIP-1 process; chip-set; duty cycle distortion; fast logic gates; full rate output data retimer; full-rate clock multiplication unit; gate delay; jitter; layout design; multiplexer IC; output data eye; output stage data retimer; package design; timing requirements; Clocks; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit layout; Integrated circuit packaging; Multiplexing; Optical distortion; Optical fiber communication; Photonic integrated circuits; Transceivers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049062
