DocumentCode
2477818
Title
Analysis of strained InGaAs/GaAs multi-quantum-well waveguide defined by ion implantation
Author
Li, Alex T H
Author_Institution
Laser Comput. Syst. Ltd., Kowloon, Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
26
Lastpage
29
Abstract
The modal properties of a strained InGaAs/GaAs Multi-Quantum Well waveguide have been analysed. The In/Ga interdiffusion rate enhanced by ion implantation have been computed with several implant energies and dosages. The waveguide propagation constant is calculated by an improved Fourier decomposition method for different annealing times.
Keywords
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; ion implantation; optical fabrication; optical waveguides; quantum well devices; Fourier decomposition; InGaAs-GaAs; annealing; interdiffusion; ion implantation; modal properties; propagation constant; strained multi-quantum-well waveguide; Annealing; Gallium arsenide; Impurities; Indium gallium arsenide; Ion implantation; Optical refraction; Optical variables control; Optical waveguides; Propagation constant; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740181
Filename
740181
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