Title :
Analysis of strained InGaAs/GaAs multi-quantum-well waveguide defined by ion implantation
Author_Institution :
Laser Comput. Syst. Ltd., Kowloon, Hong Kong
Abstract :
The modal properties of a strained InGaAs/GaAs Multi-Quantum Well waveguide have been analysed. The In/Ga interdiffusion rate enhanced by ion implantation have been computed with several implant energies and dosages. The waveguide propagation constant is calculated by an improved Fourier decomposition method for different annealing times.
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; ion implantation; optical fabrication; optical waveguides; quantum well devices; Fourier decomposition; InGaAs-GaAs; annealing; interdiffusion; ion implantation; modal properties; propagation constant; strained multi-quantum-well waveguide; Annealing; Gallium arsenide; Impurities; Indium gallium arsenide; Ion implantation; Optical refraction; Optical variables control; Optical waveguides; Propagation constant; Refractive index;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740181
