Title :
A comparison between NO-annealed O/sub 2/- and N/sub 2/O-grown gate dielectrics
Author :
Lai, P.T. ; Xu, J.P. ; Cheng, Y.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
Qualities of oxynitrides prepared by annealing O 2- and N 2O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N 2O-grown (N2ONO) oxynitride than NO-annealed O 2-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and total nitrogen content in N2ONO oxynitride than O2NO oxynitride for the same anneal temperature and time.
Keywords :
annealing; dielectric thin films; nitridation; oxidation; silicon compounds; N/sub 2/O; N/sub 2/O growth; NO; NO annealing; O/sub 2/; O/sub 2/ growth; Si-SiON; charge trapping; charge-to-breakdown; gate dielectric; interfacial nitrogen concentration; nitrogen content; oxide/Si interface; oxynitride; Annealing; Charge carrier processes; Dielectric films; Dielectric measurements; Dielectric thin films; Electron traps; Nitrogen; Oxidation; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740183
