• DocumentCode
    2477871
  • Title

    Thermally stimulated spectroscopy of hole traps in silicon nitride

  • Author

    Gritsenko, V.A. ; Xu, J.B. ; Lin, S.

  • Author_Institution
    Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    1998
  • fDate
    29-29 Aug. 1998
  • Firstpage
    40
  • Lastpage
    44
  • Abstract
    The energy distribution of hole traps in Si 3N 4 was determined by thermally stimulated depolarisation spectroscopy. Taking into account the Poole-Frenkel effect, the maximum energy in the trap energy distribution is found to be 1.07 eV, and the full width of half maximum (FWHM) is 0.18 eV, which is dominated by the electrostatic potential fluctuations in Si 3N 4.
  • Keywords
    Poole-Frenkel effect; hole traps; insulating thin films; silicon compounds; thermally stimulated currents; FWHM; Poole-Frenkel effect; Si/sub 3/N/sub 4/; electrostatic potential fluctuations; energy distribution; hole trap; silicon nitride film; thermally stimulated depolarisation spectroscopy; Channel bank filters; Electron traps; Energy measurement; Frequency; Physics; Polarization; Silicon; Spectroscopy; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-4932-6
  • Type

    conf

  • DOI
    10.1109/HKEDM.1998.740184
  • Filename
    740184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2477871