Title :
Thermally stimulated spectroscopy of hole traps in silicon nitride
Author :
Gritsenko, V.A. ; Xu, J.B. ; Lin, S.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The energy distribution of hole traps in Si 3N 4 was determined by thermally stimulated depolarisation spectroscopy. Taking into account the Poole-Frenkel effect, the maximum energy in the trap energy distribution is found to be 1.07 eV, and the full width of half maximum (FWHM) is 0.18 eV, which is dominated by the electrostatic potential fluctuations in Si 3N 4.
Keywords :
Poole-Frenkel effect; hole traps; insulating thin films; silicon compounds; thermally stimulated currents; FWHM; Poole-Frenkel effect; Si/sub 3/N/sub 4/; electrostatic potential fluctuations; energy distribution; hole trap; silicon nitride film; thermally stimulated depolarisation spectroscopy; Channel bank filters; Electron traps; Energy measurement; Frequency; Physics; Polarization; Silicon; Spectroscopy; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740184
