DocumentCode
2477929
Title
Modeling of low-frequency noise in barium titanate ceramic resistors
Author
Wong, H. ; Han, P.G. ; Poon, M.C.
Author_Institution
Dept. of Electr. Eng., City Univ., Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
49
Lastpage
53
Abstract
Low-frequency (LF) noise measurements, at room temperature and above the Curie point, were conducted in barium titanate ceramic resistors. Experiments show that the LF noise behaviors are governed by grain boundary tunneling at room temperature and by trapping and detrapping of the grain boundary states at temperatures above the Curie point and their physical models are developed, These observations provide additional information on the current conduction and the distribution of grain boundary states in these materials.
Keywords
1/f noise; barium compounds; electron device noise; ferroelectric ceramics; grain boundaries; resistors; 1/f noise; 293 K; BaTiO/sub 3/; PTCR; boundary detrapping; boundary trapping; ceramic resistors; grain boundary tunneling; low-frequency noise; Barium; Ceramics; Grain boundaries; Low-frequency noise; Noise measurement; Resistors; Temperature distribution; Temperature measurement; Titanium compounds; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740186
Filename
740186
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