Gallium nitride (GaN) HEMT´s: progress and potential for commercial applications

Author

Shealy, J. ; Smart, J. ; Poulton, M. ; Sadler, R. ; Grider, D. ; Gibb, S. ; Hosse, B. ; Sousa, B. ; Halchin, D. ; Steel, V. ; Garber, P. ; Wilkerson, P. ; Zaroff, B. ; Dick, J. ; Mercier, T. ; Bonaker, J. ; Hamilton, M. ; Greer, C. ; Isenhour, M.

Author_Institution

Infrastructure Amplifier Div., RF MICRO DEVICES, INC, Charlotte, NC, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

243

Lastpage

246

Abstract

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

Keywords

III-V semiconductors; UHF power amplifiers; gallium compounds; microwave field effect transistors; microwave oscillators; power HEMT; power semiconductor switches; wide band gap semiconductors; 100 mm; GaN; GaN HEMT; GaN transistors; commercial applications; gallium nitride HEMT technology; low-noise power oscillators; power amplifiers; power switches; Aluminum gallium nitride; Conductivity; Fabrication; Gallium nitride; HEMTs; III-V semiconductor materials; Low-noise amplifiers; Radio frequency; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049069

Filename

1049069