Title :
Gallium nitride (GaN) HEMT´s: progress and potential for commercial applications
Author :
Shealy, J. ; Smart, J. ; Poulton, M. ; Sadler, R. ; Grider, D. ; Gibb, S. ; Hosse, B. ; Sousa, B. ; Halchin, D. ; Steel, V. ; Garber, P. ; Wilkerson, P. ; Zaroff, B. ; Dick, J. ; Mercier, T. ; Bonaker, J. ; Hamilton, M. ; Greer, C. ; Isenhour, M.
Author_Institution :
Infrastructure Amplifier Div., RF MICRO DEVICES, INC, Charlotte, NC, USA
Abstract :
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; microwave field effect transistors; microwave oscillators; power HEMT; power semiconductor switches; wide band gap semiconductors; 100 mm; GaN; GaN HEMT; GaN transistors; commercial applications; gallium nitride HEMT technology; low-noise power oscillators; power amplifiers; power switches; Aluminum gallium nitride; Conductivity; Fabrication; Gallium nitride; HEMTs; III-V semiconductor materials; Low-noise amplifiers; Radio frequency; Silicon carbide; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049069
