Title :
Electrical characteristics of MIS capacitors with BST thin films deposited on n-Si(100) by the sol-gel method
Author :
Law, C.W. ; Tong, K.Y. ; Wong, K.L. ; Li, J.H. ; Kun Li
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
Abstract :
The application of high dielectric Sr 0.20Ba 0.8TiO 3 (BST) thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on n-Si(100) substrates by the sol-gel method. We examined the characteristics of the MIS capacitor at 30°C and 120°C. The hysteresis loop was determined by high frequency (1 MHz) capacitance-voltage (C-V) measurement. Also, current-voltage (I-V) characteristics of the MIS capacitor were investigated. The BST MIS structure showed a relatively high dielectric constant in the insulator. It was found that the small signal capacitance of the MIS capacitors was affected by the ferroelectric properties of the BST films. The I-V measurement revealed that the BST films obey Frenkel-Poole emission conduction process under high electric field.
Keywords :
MIS capacitors; Poole-Frenkel effect; barium compounds; dielectric hysteresis; ferroelectric capacitors; ferroelectric thin films; permittivity; sol-gel processing; strontium compounds; 1 MHz; 30 to 120 degC; Frenkel-Poole emission; MIS capacitors; Si; Sr/sub 0.20/Ba/sub 0.8/TiO/sub 3/; capacitance-voltage measurement; current-voltage characteristics; dielectric constant; ferroelectric properties; high electric field; hysteresis loop; n-Si(100) substrates; small signal capacitance; sol-gel method; thin films; Binary search trees; Capacitance-voltage characteristics; Capacitors; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables; Ferroelectric films; Sputtering; Strontium;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740187
