Title :
High power monolithic AlGaN/GaN HEMT oscillator
Author :
Kaperm V ; Tilak, V. ; Kim, H. ; Thompson, R. ; Prunty, T. ; Smart, J. ; Eastman, L.F. ; Shealy, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A monolithic X-band oscillator, based on AlGaN/GaN HEMT with 1.5 mm total gate periphery, has been designed, fabricated and characterized. The oscillator delivers 1.7 W at 9.556 GHz into 50 ohm load when biased at V/sub ds/=30 V and V/sub gs/=-5V, with a DC-to-RF efficiency of 16%. Phase noise was estimated to be -87dBc/Hz at 100 kHz offset and 30 kHz bandwidth. Experimental results show great promise for AlGaN/GaN HEMT MMIC technology to be used in future high power microwave source applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; MOCVD; aluminium compounds; field effect MMIC; gallium compounds; integrated circuit design; phase noise; power integrated circuits; vapour phase epitaxial growth; wide band gap semiconductors; 1.7 W; 16 percent; 30 kHz; 9.556 GHz; AlGaN-GaN; AlGaN-GaN HEMT MMIC technology; AlGaN/GaN HEMT oscillator; IC design; OMVPE; epitaxial growth; fabrication; high power microwave source; monolithic X-band oscillator; organo-metallic vapor phase epitaxy; phase noise performance; Aluminum gallium nitride; Electrical resistance measurement; Epitaxial growth; Fabrication; Gallium nitride; HEMTs; Lithography; Microwave oscillators; Phase noise; Power amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049071
