Title :
Full-wave modeling device parasitics of sub-millimeter wave HEMTs
Author :
Karisan, Y. ; Sertel, Kubilay
Author_Institution :
ElectroScience Lab., Ohio State Univ., Columbus, OH, USA
Abstract :
Extrinsic parasitic couplings of millimeter-wave and submillimeter-wave high electron mobility transistors (HEMTs) are investigated in the context of THz integrated circuits. More specifically, a multiple-step HEMT parasitic extraction procedure, aimed at improving device performance in the THz band, is developed. A distributed circuit model of lossy substrate is introduced to better approximate the propagation and attenuation through the mesa of the device. Intrinsic and extrinsic effects are considered independently to clearly identify the factors impacting high frequency operation. Numerical examples, involving a submmW HEMT are presented to illustrate the working mechanism of the proposed characterization technique.
Keywords :
high electron mobility transistors; microwave integrated circuits; millimetre wave field effect transistors; semiconductor device models; submillimetre wave transistors; Intrinsic effects; THz band; THz integrated circuits; distributed circuit model; extrinsic effects; extrinsic parasitic couplings; full-wave modeling device parasitics; lossy substrate; millimeter-wave high electron mobility transistors; sub-millimeter wave HEMT; Couplings; Equivalent circuits; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Performance evaluation;
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location :
Memphis, TN
Print_ISBN :
978-1-4799-3538-3
DOI :
10.1109/APS.2014.6905310
