DocumentCode
2478044
Title
Anodic-oxide-induced interdiffusion in quantum wells structure
Author
Chan, M.C.Y. ; Li, E. Herbert ; Yuan, Shu ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
74
Lastpage
77
Abstract
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO 2 cap annealed quantum well structures.
Keywords
III-V semiconductors; aluminium compounds; anodisation; chemical interdiffusion; gallium arsenide; interface structure; oxidation; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; SiO/sub 2/ cap annealed quantum well structures; activation energy; anodic-oxide-induced interdiffusion; diffused QW modeling; intermixing; photoluminescence; quantum wells; Chemical lasers; Etching; Gallium arsenide; Laser transitions; Optical device fabrication; Quantum well lasers; Substrates; Temperature; Waveguide lasers; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740191
Filename
740191
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