Title :
Anodic-oxide-induced interdiffusion in quantum wells structure
Author :
Chan, M.C.Y. ; Li, E. Herbert ; Yuan, Shu ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO 2 cap annealed quantum well structures.
Keywords :
III-V semiconductors; aluminium compounds; anodisation; chemical interdiffusion; gallium arsenide; interface structure; oxidation; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; SiO/sub 2/ cap annealed quantum well structures; activation energy; anodic-oxide-induced interdiffusion; diffused QW modeling; intermixing; photoluminescence; quantum wells; Chemical lasers; Etching; Gallium arsenide; Laser transitions; Optical device fabrication; Quantum well lasers; Substrates; Temperature; Waveguide lasers; Waveguide transitions;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740191
