Title :
Study of 1/f noise in III-V nitride based MODFETs at low drain bias
Author :
Ho, W. ; Surya, C. ; Tong, K.Y. ; Kim, W. ; Botcharev, A. ; Morkoc, H.
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong
Abstract :
Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S V(f), were found to be proportional to 1/f γ where γ depends on the device temperature as well as the gate bias. A study of S V(f) as a function of the biasing condition was conducted in detail and was found to vary as V G 2/(V G-V T) β where β is a function of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations were not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.
Keywords :
1/f noise; III-V semiconductors; carrier mobility; flicker noise; fluctuations; high electron mobility transistors; interface states; localised states; semiconductor device noise; semiconductor epitaxial layers; wide band gap semiconductors; 1/f noise; 20 C to 130 K; III-V nitride based MODFETs; MBE grown III-V nitride MODFETs; biasing; channel area; device temperature; flicker noise; gate bias; localized states; low drain bias; number fluctuations; room temperature; surface mobility fluctuations; thermal activation; voltage noise power spectra; 1f noise; Electrons; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740193
