Title :
Base-collector heterojunction barrier effect of the SiGe HBT at high current densities
Author :
Yuan, J.S. ; Song, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. Good agreement between the analytical model predictions and experiment is obtained.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; SiGe HBT; analytical model; base-collector heterojunction barrier; capacitance; collector current density; conduction band discontinuity; heterojunction bipolar transistor; Analytical models; Capacitance; Costs; Current density; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Mobile communication; Poisson equations; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740197
