DocumentCode
2478138
Title
Base-collector heterojunction barrier effect of the SiGe HBT at high current densities
Author
Yuan, J.S. ; Song, J.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
101
Lastpage
104
Abstract
The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. Good agreement between the analytical model predictions and experiment is obtained.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; SiGe HBT; analytical model; base-collector heterojunction barrier; capacitance; collector current density; conduction band discontinuity; heterojunction bipolar transistor; Analytical models; Capacitance; Costs; Current density; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Mobile communication; Poisson equations; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740197
Filename
740197
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