Title :
44 GHz fully integrated and differential monolithic VCOs with wide tuning range in AlInAs/InGaAs/InP DHBT
Author :
Kurdoghlian, A. ; Mokhtari, M. ; Fields, C.H. ; Thomas, S., III
Author_Institution :
LLC, HRL Labs., Malibu, CA, USA
Abstract :
A fully integrated and differential AlInAs/InGaAs/InP DHBT voltage controlled oscillator (VCO) with wide tuning range and integrated divide-by-2 static divider was demonstrated for 44 GHz wireless and optical communication applications. To our knowledge, these 44 GHz ICs are the highest frequency fundamental mode fully integrated and differential VCOs with wide tuning range ever reported. The 44 GHz fundamental VCO delivers a typical differential output power of +4 dBm at a center frequency of 44 GHz with a tuning range of up to 4.5 GHz. The measured phase noise shows better than -100 dBc/Hz at 1 MHz offset and better than -80 dBc/Hz at 100 kHz offset. We have achieved more than 6 dB improvement in phase noise performance over the differential SHBT VCO results that we reported last year (A. Kurdoghlian et al., IEEE GaAs IC Symp. Dig., pp. 129-132, 2001).
Keywords :
III-V semiconductors; aluminium compounds; bipolar MIMIC; circuit tuning; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; integrated circuit noise; millimetre wave oscillators; optical communication equipment; phase noise; radio equipment; voltage-controlled oscillators; 44 GHz; AlInAs-InGaAs-InP; AlInAs/InGaAs/InP DHBT voltage controlled oscillator; center frequency; differential SHBT VCO; differential output power; fully integrated differential monolithic VCO; fundamental mode integrated differential VCO; integrated divide-by-two static divider; optical communication applications; phase noise performance; tuning range; wireless communication applications; Frequency; Indium gallium arsenide; Indium phosphide; Noise measurement; Optical fiber communication; Optical tuning; Phase noise; Power generation; Voltage-controlled oscillators; Wireless communication;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049079