DocumentCode
2478163
Title
Thermal stability of nickel silicides in different silicon substrates
Author
Ho, Stephen C H ; Poon, M.C. ; Chan, Mansun ; Wong, H.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
105
Lastpage
108
Abstract
Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700°C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400°C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000°C FGA and on 1000 Å gate oxide.
Keywords
annealing; electrical resistivity; metallic thin films; nickel compounds; thermal stability; 400 to 1000 C; NiSi; Si; forming gas annealing; nickel silicide film; resistivity; silicon substrate; thermal stability; Annealing; Conductivity; Crystallization; MOS devices; Nickel; Silicides; Silicon; Substrates; Temperature; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740198
Filename
740198
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