Title :
100+ GHz static divide-by-2 circuit in InP-DHBT technology
Author :
Mokhtari, M. ; Fields, C. ; Rajavel, R.D.
Author_Institution :
LLC, HRL Labs., Malibu, CA, USA
Abstract :
Static dividers in 135 GHz InP-DHBT technology have been designed, fabricated and measured. Circuits are operational from DC to 100 GHz. Due to limitations in available measurement equipment, investigation of the circuit operation beyond 100 GHz is not possible at this time, however, already, to the authors´ knowledge, this is the highest toggling frequency reported in any static circuit in any technology. The circuit consumes about 150 mA from a single 5V supply and allocates a total area of 675 /spl times/ 900 /spl mu/m/sup 2/.
Keywords :
bipolar logic circuits; dividing circuits; heterojunction bipolar transistors; indium compounds; 0 to 100 GHz; 135 GHz; 150 mA; 5 V; DHBT technology; InP; circuit operation; divider; measurement equipment; static divide-by-2 circuit; toggling frequency; Cutoff frequency; DH-HEMTs; Delay; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Laboratories; Latches; Optical amplifiers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049080
