DocumentCode
2478177
Title
100+ GHz static divide-by-2 circuit in InP-DHBT technology
Author
Mokhtari, M. ; Fields, C. ; Rajavel, R.D.
Author_Institution
LLC, HRL Labs., Malibu, CA, USA
fYear
2002
fDate
20-23 Oct. 2002
Firstpage
291
Lastpage
293
Abstract
Static dividers in 135 GHz InP-DHBT technology have been designed, fabricated and measured. Circuits are operational from DC to 100 GHz. Due to limitations in available measurement equipment, investigation of the circuit operation beyond 100 GHz is not possible at this time, however, already, to the authors´ knowledge, this is the highest toggling frequency reported in any static circuit in any technology. The circuit consumes about 150 mA from a single 5V supply and allocates a total area of 675 /spl times/ 900 /spl mu/m/sup 2/.
Keywords
bipolar logic circuits; dividing circuits; heterojunction bipolar transistors; indium compounds; 0 to 100 GHz; 135 GHz; 150 mA; 5 V; DHBT technology; InP; circuit operation; divider; measurement equipment; static divide-by-2 circuit; toggling frequency; Cutoff frequency; DH-HEMTs; Delay; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Laboratories; Latches; Optical amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location
Monterey, California, USA
ISSN
1064-7775
Print_ISBN
0-7803-7447-9
Type
conf
DOI
10.1109/GAAS.2002.1049080
Filename
1049080
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