Title :
Influences of processing technique on electrical characteristics of TVS used in communication systems
Author :
Zheng, X.R. ; Liu, B.Y. ; Li, Bin ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
An improved technique is proposed in fabricating a semiconductor surge protection device which is used in high-speed wideband information transmission systems. In order to increase the surge handling capability of the device, a double p-type diffusion is used. Specifically, in the diffusion step of gallium, SiO 2 is used as a mask to obtain a very small base width and to avoid the reduction of carrier lifetime. It is found that this is a very useful way to reduce the on-state voltage drop and therefore the energy dissipation of the device.
Keywords :
carrier lifetime; diffusion; elemental semiconductors; gallium; semiconductor doping; silicon; surge protection; Si:Ga; SiO/sub 2/ mask; carrier lifetime; communication system; double p-type diffusion; electrical characteristics; energy dissipation; high-speed wideband information transmission; on-state voltage drop; semiconductor surge protection device; transient voltage suppressor; Bidirectional control; Capacitance; Electric variables; Energy dissipation; III-V semiconductor materials; Silicon devices; Surge protection; Switches; Voltage; Wideband;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740199
