Title :
A predictive semi-analytical threshold voltage model for deep-submicron MOSFET´s
Author :
Lim, K.Y. ; Zhou, X. ; Lim, D. ; Zu, Y. ; Ho, H.M. ; Loiko, K. ; Lau, C.K. ; Tse, M.S. ; Choo, S.C.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.
Keywords :
MOSFET; semiconductor device models; 2D device simulation; deep-submicron MOSFET; scaling characteristics; semi-analytical model; threshold voltage; Chemical technology; Doping; Equations; Integrated circuit modeling; MOSFET circuits; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Surface fitting; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740200
