DocumentCode
2478208
Title
A predictive semi-analytical threshold voltage model for deep-submicron MOSFET´s
Author
Lim, K.Y. ; Zhou, X. ; Lim, D. ; Zu, Y. ; Ho, H.M. ; Loiko, K. ; Lau, C.K. ; Tse, M.S. ; Choo, S.C.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
114
Lastpage
117
Abstract
A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.
Keywords
MOSFET; semiconductor device models; 2D device simulation; deep-submicron MOSFET; scaling characteristics; semi-analytical model; threshold voltage; Chemical technology; Doping; Equations; Integrated circuit modeling; MOSFET circuits; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Surface fitting; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740200
Filename
740200
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