Title :
Degradation of epitaxial lift-off AlGaAs/GaAs metal-semiconductor-metal photodetectors due to field assisted etching
Author :
Hargis, M.C. ; Drabik, T.J. ; Woodall, J.M.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We have demonstrated the occurrence of the field-assisted etching of pits on the back surface of ELO AlGaAs-GaAs MSMs. The etching causes an increase in the leakage current of the MSM and therefore creates a reliability problem for ELO technology. The etching may possibly be circumvented through the use of LT material or better attachment processes
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; etching; gallium arsenide; leakage currents; metal-semiconductor-metal structures; photodetectors; semiconductor device reliability; AlGaAs-GaAs; AlGaAs/GaAs metal-semiconductor-metal photodetectors; ELO technology; LT material; attachment processes; back surface; epitaxial lift-off; field assisted etching; leakage current; pits; reliability problem; Degradation; Electrodes; Etching; Gallium arsenide; Leakage current; Lithography; Photodetectors; Polyimides; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379067
