A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.