DocumentCode
2478296
Title
Negative binomial yield model parameter extraction using wafer probe bin map data
Author
Langford, R.E. ; Liou, J.J.
Author_Institution
Lucent Technol., Orlando, FL, USA
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
130
Lastpage
133
Abstract
This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing schemes in the analysis of wafer probe results. The results show that a large number of the wafers analyzed have cluster parameters greater than that typically reported in the literature.
Keywords
integrated circuit yield; semiconductor process modelling; cluster parameter extraction; defect density; die windowing; negative binomial yield model; nonlinear equation; semiconductor manufacturing; wafer probe bin map; Circuits; Costs; Data mining; Electronics industry; History; Nonlinear equations; Parameter extraction; Probes; Productivity; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740204
Filename
740204
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