• DocumentCode
    2478296
  • Title

    Negative binomial yield model parameter extraction using wafer probe bin map data

  • Author

    Langford, R.E. ; Liou, J.J.

  • Author_Institution
    Lucent Technol., Orlando, FL, USA
  • fYear
    1998
  • fDate
    29-29 Aug. 1998
  • Firstpage
    130
  • Lastpage
    133
  • Abstract
    This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing schemes in the analysis of wafer probe results. The results show that a large number of the wafers analyzed have cluster parameters greater than that typically reported in the literature.
  • Keywords
    integrated circuit yield; semiconductor process modelling; cluster parameter extraction; defect density; die windowing; negative binomial yield model; nonlinear equation; semiconductor manufacturing; wafer probe bin map; Circuits; Costs; Data mining; Electronics industry; History; Nonlinear equations; Parameter extraction; Probes; Productivity; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-4932-6
  • Type

    conf

  • DOI
    10.1109/HKEDM.1998.740204
  • Filename
    740204