Title :
Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz
Author :
Fernandez-Barciela, M. ; Tasker, P.J. ; Demmler, M. ; Campos-Roca, Y. ; Messler, H. ; Sanchez, E. ; Curras-Francos, C. ; Schlechtweg, M.
Author_Institution :
Vigo Univ., Spain
Abstract :
In this paper two similar simplified nonquasi-static approaches are applied for high-frequency large-signal FET prediction. Both account for low-frequency dispersion and use a simplified extraction process through the use of linear delays. Excellent results are obtained from dc up to the device f/sub T/ frequencies, even when f/sub T/ is 120 GHz. For low-frequency prediction a simple quasi-static extrinsic approach can produce excellent results thus further simplifying modelling. The influence of including the low-frequency dispersion modelling is also taken into account.
Keywords :
millimetre wave field effect transistors; semiconductor device models; 118.5 GHz; cut-off frequency; high-frequency large-signal FET; linear delay; low-frequency dispersion; nonquasi-static model; parameter extraction; Bandwidth; Delay effects; Delay lines; FETs; Frequency; MMICs; Microwave Theory and Techniques Society; Predictive models; Proposals; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596614
