Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz

Author

Fernandez-Barciela, M. ; Tasker, P.J. ; Demmler, M. ; Campos-Roca, Y. ; Messler, H. ; Sanchez, E. ; Curras-Francos, C. ; Schlechtweg, M.

Author_Institution

Vigo Univ., Spain

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1499

Abstract

In this paper two similar simplified nonquasi-static approaches are applied for high-frequency large-signal FET prediction. Both account for low-frequency dispersion and use a simplified extraction process through the use of linear delays. Excellent results are obtained from dc up to the device f/sub T/ frequencies, even when f/sub T/ is 120 GHz. For low-frequency prediction a simple quasi-static extrinsic approach can produce excellent results thus further simplifying modelling. The influence of including the low-frequency dispersion modelling is also taken into account.

Keywords

millimetre wave field effect transistors; semiconductor device models; 118.5 GHz; cut-off frequency; high-frequency large-signal FET; linear delay; low-frequency dispersion; nonquasi-static model; parameter extraction; Bandwidth; Delay effects; Delay lines; FETs; Frequency; MMICs; Microwave Theory and Techniques Society; Predictive models; Proposals; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596614

Filename

596614