Title :
A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance
Author :
Gelagaev, Ratmir ; Jacqmaer, Pieter ; Everts, Jordi ; Driesen, Johan
Author_Institution :
Dept. of Electr. Eng., Katholieke Univ. Leuven, Leuven, Belgium
Abstract :
For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when the range of the measurement channel is not set wide enough to measure both on-state and off-state voltage, resulting in failure to accurately measure the voltage waveforms. A novel voltage clamp circuit improving the accuracy of the transistor on-state voltage measurement is presented. The measurement accuracy is improved by clamping the off-state voltage across the transistor to a lower voltage that is still greater than the on-state voltage. Unlike traditional clamping circuit, the presented voltage clamp circuit does not introduce delay caused by RC time constants keeping the voltage waveform clear even during state transitions of the evaluated semiconductor device for frequencies up to 1MHz.
Keywords :
transistors; voltage measurement; RC time constant; novel voltage clamp circuit; off-state voltage; semiconductor device; state transition; transistor dynamic on-resistance; transistor on-state voltage measurement; voltage waveform; Clamps; Current measurement; Oscilloscopes; Semiconductor device measurement; Semiconductor diodes; Transistors; Voltage measurement; Measurement; accuracy improvement; dynamic on-resistance; measurement resolution improvement; switching device; voltage clamping;
Conference_Titel :
Instrumentation and Measurement Technology Conference (I2MTC), 2012 IEEE International
Conference_Location :
Graz
Print_ISBN :
978-1-4577-1773-4
DOI :
10.1109/I2MTC.2012.6229275