Title :
Spreading-Resistance Temperature Sensor on SOI
Author :
Lai, P.T. ; Li, Bin ; Chan, C.L.
Author_Institution :
University of Hong Kong
Abstract :
A Spreading-Resistance Temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) wafer and achieves characteristics comparable with similar SRT sensor on silicon wafer. This sensor structure can be potentially used in integrated sensors operating at temperatures up to 350 °C.
Keywords :
electrical resistivity; elemental semiconductors; microsensors; silicon; silicon-on-insulator; temperature sensors; Conductivity; Costs; Dielectrics and electrical insulation; Manufacturing industries; Semiconductor films; Sensor phenomena and characterization; Silicon on insulator technology; Temperature measurement; Temperature sensors; Thermal sensors;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740208
