Title :
Fabrication and characterization of porous polycrystalline silicon resistive sensor
Author :
Han, P.G. ; Wong, H. ; Poon, M.C.
Author_Institution :
Department of Electronic Engineering, City UniversiQ, 83 Tat Chee Avenue, Kowloon, Hong Kong
Abstract :
A thin layer of p-type anodized porous polycrystalline silicon (PPS) are formed on n-type epitaxial crystal silicon wafer. The sensitivity of the resistors based on this PPS has been characterized and analyzed at different ambient pressures and temperature as well as gas species. Results show that the current-voltage characteristics are highly sensitive to the ambient pressure and organic gases. In addition, the effects of illumination and temperature are also studied.
Keywords :
anodisation; electrical resistivity; elemental semiconductors; gas sensors; microsensors; porous semiconductors; pressure sensors; silicon; temperature sensors; Conductivity; Current-voltage characteristics; Fabrication; Gold; Resistors; Semiconductor films; Sensor phenomena and characterization; Silicon; Temperature sensors; Thin film sensors;
Conference_Titel :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-4932-6
DOI :
10.1109/HKEDM.1998.740209
