• DocumentCode
    2479266
  • Title

    A high power MOSFET computer model

  • Author

    Nienhaus, H.A. ; Bowers, J.C. ; Herren, P. C., Jr.

  • Author_Institution
    University of South Florida, Tampa, USA
  • fYear
    1980
  • fDate
    16-20 June 1980
  • Firstpage
    97
  • Lastpage
    103
  • Abstract
    This paper describes a non-linear computer model for high power MOS field effect transistors, along with techniques for determining the model parameters from a data sheet. A comparison of data sheet vs. computer simulated drain characteristics and transient response indicates excellent correlation.
  • Keywords
    Computational modeling; Computers; Integrated circuit modeling; MOSFET; Mathematical model; SPICE; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1980. PESC. IEEE
  • Conference_Location
    Atlanta, Georgia, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1980.7089438
  • Filename
    7089438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2479266