DocumentCode
2479293
Title
A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities
Author
Peyretaillade, T. ; Perez, M. ; Mons, S. ; Sommet, R. ; Auxemery, Ph. ; Lalaurie, J.C. ; Quere, R.
Author_Institution
IRCOM, Limoges Univ., France
Volume
3
fYear
1997
fDate
8-13 June 1997
Firstpage
1515
Abstract
In this paper, a new electrothermal non linear model of HBT suitable for CAD purposes is presented. This model is fully determined by pulsed measurement techniques and for the first time, it is shown that the prediction of thermal instabilities (collapse of current gain) is obtained from the CAD model. The model has been validated both by DC and RF load-pull measurements.
Keywords
CAD; heterojunction bipolar transistors; semiconductor device models; thermal stability; CAD; DC load-pull; HBT; RF load-pull; current gain; electrothermal nonlinear model; pulsed measurement; thermal stability; Current measurement; Electrothermal effects; Heterojunction bipolar transistors; Predictive models; Pulse measurements; Radio frequency; Temperature; Thermal resistance; Thermal stability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.596619
Filename
596619
Link To Document