Title :
Effects of Emitter-Open switching on the turn-off characteristics of high-voltage power transistors
Author :
Jackson, Barry ; Chen, Dan Y.
Author_Institution :
General Electric, Corporate Research and Development, Schenectady, NY 12301, USA
Abstract :
Test results have shown that using Emitter-Open switching turn-off scheme, the storage time and the fall time of a high-voltage power transistor can be reduced by a factor of at least 2. In addition, the effects of reverse-bias second breakdown are essentially eliminated up to the VCBO and IDC of the device.
Keywords :
Breakdown voltage; Clamps; Electric breakdown; Power transistors; Switches; Switching circuits; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1980. PESC. IEEE
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/PESC.1980.7089442
