• DocumentCode
    2479354
  • Title

    Effects of Emitter-Open switching on the turn-off characteristics of high-voltage power transistors

  • Author

    Jackson, Barry ; Chen, Dan Y.

  • Author_Institution
    General Electric, Corporate Research and Development, Schenectady, NY 12301, USA
  • fYear
    1980
  • fDate
    16-20 June 1980
  • Firstpage
    147
  • Lastpage
    154
  • Abstract
    Test results have shown that using Emitter-Open switching turn-off scheme, the storage time and the fall time of a high-voltage power transistor can be reduced by a factor of at least 2. In addition, the effects of reverse-bias second breakdown are essentially eliminated up to the VCBO and IDC of the device.
  • Keywords
    Breakdown voltage; Clamps; Electric breakdown; Power transistors; Switches; Switching circuits; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1980. PESC. IEEE
  • Conference_Location
    Atlanta, Georgia, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1980.7089442
  • Filename
    7089442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2479354